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GaN外延材料及其自供电紫外光电探测器研究进展

卜俊飞,  郑旭阳,  林正梁,  胡星,  李屹,  刘平安,  李国强,  王文樑

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文章导航 > 金属世界  > 2024 >  (2): 10-20
卜俊飞, 郑旭阳, 林正梁, 胡星, 李屹, 刘平安, 李国强, 王文樑. GaN外延材料及其自供电紫外光电探测器研究进展[J]. 金属世界, 2024 (2): 10-20. doi: 10.3969/j.issn.1000-6826.2023.12.2901
引用本文: 卜俊飞, 郑旭阳, 林正梁, 胡星, 李屹, 刘平安, 李国强, 王文樑. GaN外延材料及其自供电紫外光电探测器研究进展[J]. 金属世界, 2024 (2): 10-20. doi: 10.3969/j.issn.1000-6826.2023.12.2901
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Junfei BU, Xuyang ZHENG, Zhengliang LIN, Xing HU, Yi LI, Pingan LIU, Guoqiang LI, Wenliang WANG. Recent Research Progress of GaN Epitaxial Material and Its Self-powered UV Photodetector[J]. Metal World, 2024 (2): 10-20. doi: 10.3969/j.issn.1000-6826.2023.12.2901
Citation: Junfei BU, Xuyang ZHENG, Zhengliang LIN, Xing HU, Yi LI, Pingan LIU, Guoqiang LI, Wenliang WANG. Recent Research Progress of GaN Epitaxial Material and Its Self-powered UV Photodetector[J]. Metal World, 2024 (2): 10-20. doi: 10.3969/j.issn.1000-6826.2023.12.2901
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GaN外延材料及其自供电紫外光电探测器研究进展

doi: 10.3969/j.issn.1000-6826.2023.12.2901
  • 1.

    华南理工大学材料科学与工程学院，广东　广州　510641

基金项目: 中央高校基金基本科研业务费项目资助（D2230320）。
详细信息
    作者简介:

    卜俊飞（2002—），男，华南理工大学在校本科生。通信地址：广东省广州市天河区五山路381号华南理工大学

    通讯作者:

    王文樑（1989—），男，博士，教授，研究方向为GaN外延材料与探测器，通信地址：广东省广州市天河区五山路381号华南理工大学；E-mail：wenliangwang@scut.edu.cn。

Recent Research Progress of GaN Epitaxial Material and Its Self-powered UV Photodetector

    摘要
  • 摘要: 近年来，自供电GaN基紫外光电探测器凭借具有的紫外敏感性、高稳定性及便携应用等特点，在紫外通信、紫外辐射检测以及导弹追踪等领域具有重要的应用前景。但其发展依旧面临着材料位错密度高、器件性能差、器件集成度低等问题。为了解决上述问题，科研工作者开展系统地研究并取得了重要进展。本文从材料缺陷控制、器件结构设计和器件集成应用三个方面讨论了自供电GaN基紫外光电探测器的研究进展，并展望了其发展前景。
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  • 图  1  (a)低压比下SiC上GaN的AFM表面形貌[10]；(b) 90 nm的AlGaN缓冲层GaN AFM表征图[11]；(c) 缓冲层作用的表面形态[12]；(d) 异质结结构及二维电子气分布[13]

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    图  2  （a）两步生长法中的生长位错还原过程[14]；（b） 15 nm厚度的GaN块体AFM图像(5 μm×5 µm)[15]；（c）不同样品螺旋位错密度[16]；（d）LT-GaN（2 μm×2 μm）的AFM表征图，纵坐标表示与标记线距离[16]

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    图  3  (a) 选区生长作用机理示意图；(b) 830 °C下生长层的扫描电镜横截面图像[19]；(c)对照组扫描电镜图像a与选区生长组扫描电镜图像b[20]；(d) 选区生长俯视图[21]

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    图  4  (a) 加入CdS后的能带图[32]；(b) p-GaN/n-ZnO异质结构的自供电柔性紫外光电探测器的电流–时间曲线[34]；(c) 254 nm光下，有无GaON探测器的电流−电压曲线对比[37]；(d) 在无偏压条件下的电流–时间曲线测量[39]

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    图  5  (a)基于非对称电极的紫外光电探测器在紫外照明下的结构示意图[45]；(b)在254nm紫外照明下，有和无纳米颗粒的零偏置的GaN紫外光电探测器的电流时间特性对比[47]；(c)加入AlGaN/GaN后能带结构示意[50]；(d)加入AlGaN/GaN前后器件在零偏压下光谱响应率的变化[50]

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    图  6  (a)恢复时间与工作温度关系[52]；(b)恢复时间示意图[54]；(c)MHM型探测器电流–温度关系[55]；(d)不同结构探测器响应度–温度关系[55]

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    图  7  (a)开关比和级联程度、偏压关系[60]；(b)集成平台结构图[57]；(c)不同VPD下探测器的光暗电流曲线[57]；(d)不同VLED下探测器波长响应情况[57]

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